@vic
SOT-23 Plastic-Encapsulate Transistors
MMBT5551LT1
FEATURES
Power dissipation
P
CM:
0.3
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
W (Tamb=25℃)
1. 0
2. 4
1. 3
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
0. 95
Collector current
I
CM
:
0.6
A
Collector-base voltage
180
V
V
(BR)CBO
:
Operating and storage junction temperature range
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Ic= 100
µ
A, I
E
=0
Ic= 0.1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
=180V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
=10mA
V
CE
= 5V, I
C
=50mA
I
C
=50 mA, I
B
= 5mA
I
C
= 50 mA, I
B
= 5mA
V
CE
=10V, I
C
= 10mA,
f=
100MHz
180
160
6
0.1
0.1
80
80
30
0.5
1
80
250
0. 4
V
V
V
µ
A
µ
A
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
V
MHz
f
T
DEVICE MARKING
MMBT5551LT1=G1
AVICTEK [ Avic Technology ]
