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06031A331FAT2A 参数 Datasheet PDF下载

06031A331FAT2A图片预览
型号: 06031A331FAT2A
PDF下载: 下载PDF文件 查看货源
内容描述: C0G ( NP0 )电介质 [C0G (NP0) Dielectric]
分类和应用:
文件页数/大小: 4 页 / 107 K
品牌: KYOCERA AVX [ KYOCERA AVX ]
 浏览型号06031A331FAT2A的Datasheet PDF文件第1页浏览型号06031A331FAT2A的Datasheet PDF文件第3页浏览型号06031A331FAT2A的Datasheet PDF文件第4页  
C0G (NP0) Dielectric  
Specifications and Test Methods  
Parameter/Test  
Operating Temperature Range  
Capacitance  
NP0 Specification Limits  
Measuring Conditions  
emperature Cycle Chamber  
ꢃreq.: 1.0 MHz ± 10ꢁ for cap ꢆ 1000 pꢃ  
1.0 kHz ± 10ꢁ for cap ꢇ 1000 pꢃ  
Voltage: 1.0Vrms ± .2V  
-55ºC to +125ºC  
Within specified tolerance  
ꢄ±0 pꢃ: Qꢅ 400+20 x Cap Value  
ꢅ±0 pꢃ: Qꢅ 1000  
Q
100,000MΩ or 1000MΩ - μ,  
whichever is less  
Charge device with rated voltage for  
60 ± 5 secs ꢈ room tempꢀhumidity  
Charge device with ±00ꢁ of rated voltage for  
1-5 seconds, wꢀcharge and discharge current  
limited to 50 mA (max)  
Insulation Resistance  
Dielectric Strength  
No breakdown or visual defects  
Note: Charge device with 150ꢁ of rated  
voltage for 500V devices.  
Appearance  
Capacitance  
Variation  
No defects  
Deflection: 2mm  
est ꢂime: ±0 seconds  
±5ꢁ or ±.5 p, whichever is greater  
Resistance to  
Flexure  
1mm/sec  
Q
Meets Initial Values (As Above)  
ꢅ Initial Value x 0.±  
Stresses  
Insulation  
Resistance  
90 mm  
ꢅ 95ꢁ of each terminal should be covered  
with fresh solder  
No defects, ꢄ25ꢁ leaching of either end terminal  
Dip device in eutectic solder at 2±0 ± 5ºC  
for 5.0 ± 0.5 seconds  
Solderability  
Appearance  
Capacitance  
Variation  
ꢆ ±2.5ꢁ or ±.25 p, whichever is greater  
Dip device in eutectic solder at 260ºC for 60  
seconds. Store at room temperature for 24 ± 2  
hours before measuring electrical properties.  
Resistance to  
Solder Heat  
Q
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Insulation  
Resistance  
Dielectric  
Meets Initial Values (As Above)  
No visual defects  
Strength  
Appearance  
Capacitance  
Variation  
Step 1: -55ºC ± 2º  
Step 2: Room emp  
±0 ± ± minutes  
ꢆ ± minutes  
ꢆ ±2.5ꢁ or ±.25 p, whichever is greater  
Thermal  
Shock  
Q
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Step ±: +125ºC ± 2º  
Step 4: Room emp  
±0 ± ± minutes  
ꢆ ± minutes  
Insulation  
Resistance  
Dielectric  
Repeat for 5 cycles and measure after  
24 hours at room temperature  
Meets Initial Values (As Above)  
No visual defects  
Strength  
Appearance  
Capacitance  
Variation  
ꢆ ±±.0ꢁ or ± .± p, whichever is greater  
Charge device with twice rated voltage in  
test chamber set at 125ºC ± 2ºC  
for 1000 hours (+48, -0).  
ꢅ ±0 pꢃ:  
ꢅ10 p, ±0 pꢃ:  
ꢄ10 pꢃ:  
Qꢅ ±50  
Qꢅ 275 +5Cꢀ2  
Qꢅ 200 +10C  
Q
Load Life  
(C=Nominal Cap)  
Insulation  
Resistance  
Dielectric  
Remove from test chamber and stabilize at  
room temperature for 24 hours  
before measuring.  
ꢅ Initial Value x 0.± (See Above)  
Meets Initial Values (As Above)  
No visual defects  
Strength  
Appearance  
Capacitance  
Variation  
ꢆ ±5.0ꢁ or ± .5 p, whichever is greater  
Store in a test chamber set at 85ºC ± 2ºCꢀ  
85ꢁ ± 5ꢁ relative humidity for 1000 hours  
(+48, -0) with rated voltage applied.  
ꢅ ±0 pꢃ:  
ꢅ10 p, ±0 pꢃ:  
ꢄ10 pꢃ:  
Qꢅ ±50  
Qꢅ 275 +5Cꢀ2  
Qꢅ 200 +10C  
Load  
Q
Humidity  
Insulation  
Resistance  
Dielectric  
Strength  
Remove from chamber and stabilize at  
room temperature for 24 ± 2 hours  
before measuring.  
ꢅ Initial Value x 0.± (See Above)  
Meets Initial Values (As Above)  
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