BAIDU MICRO ELECTRONS CO., LTD.
SOD-123 Plastic-Encapsulate Diodes
SOD-123
B5817W-5819W
FEATURES
SCHOTTKY BARRIER DIODE
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING:
B5817W: SJ
B5818W:SK
B5819W: SL
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-Repetitive Peak
Reverse Voltage
Peak
Repetitive
Peak
Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak
Forward Surge Current
@t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage
Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
θJA
T
J
T
STG
B5817W
20
20
14
B5818W
30
30
21
1
9
1.5
500
250
125
-55~+150
B5819W
40
40
28
Unit
V
V
V
A
A
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
Test
I
R
= 1mA
conditions
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
Min
20
30
40
Max
Unit
V
Reverse voltage leakage current
I
R
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
1
0.45
0.75
0.55
0.875
0.6
0.9
120
mA
V
V
V
Forward voltage
V
F
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF
1
BAIDUMICRO [ BaiDu Micro electrons Co., Ltd ]
