Data Sheet
CURRENT MODE PWM CONTROLLER
AP384XC
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
UNDER -VOLTAGE LOCKOUT SECTION
Start Threshold
VTH(ST)
AP3842C/AP3844C
AP3843C/AP3845C
AP3842C/AP3844C
AP3843C/AP3845C
15
7.8
8.5
7.0
16
8.4
17
9.0
V
V
V
V
Min. Operation Voltage
(After Turn On)
VOPR
10.0
7.6
11.5
8.2
(Min.)
PWM SECTION
D(Max.)
D(Max.)
D(Min.)
AP3842C/AP3843C
AP3844C/AP3845C
95
46
97
48
100
50
0
%
%
%
Max. Duty Cycle
Min. Duty Cycle
TOTAL STANDBY CURRENT SECTION
Start-Up Current
IST
ICC(OPR)
VZ
50
8
80
12
µA
mA
V
Operating Supply Current
Zener Voltage
Vpin3=Vpin2=0V
ICC=25mA
30
34
OVER-TEMPERATURE PROTECT SECTION
oC
oC
Shutdown Temperature
Temperature Hysteresis
TSHUT
THYS
(Note 6)
(Note 6)
155
25
Note 4: Parameters are tested at trip point of latch with Vpin2 = 0.
Note 5: Here gain is defined as:
∆VPin 1
A=
, 0 ≤ Vpin3 ≤ 0.8V
∆VPin 3
Note 6: These parameters, although guaranteed, are not 100% tested in production.
Note 7: This parameter is measured with RT=10kΩ to V it contributes 0.3mA of current to the measured value.
REF,
So the total current flowing into the CT pin will be 0.3mA higher than the measured value approximately.
VREF
RT
AP384XC
4.7k
2N2222
100k
A
VCC
1
2
3
4
VREF
8
7
6
5
COMP
1k
VCC
VFB
ERROR AMP
ADJUST
1K
1W
0.1µF
5k
ISENSE
ADJUST
OUTPUT
ISENSE
OUTPUT
GND
4.7k
0.1µF
GND
RT/CT
CT
Figure 4. Basic Test Circuit
BCD Semiconductor Manufacturing Limited
Sep. 2006 Rev. 1. 1
7
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
