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AZ494BM-E1 参数 Datasheet PDF下载

AZ494BM-E1图片预览
型号: AZ494BM-E1
PDF下载: 下载PDF文件 查看货源
内容描述: 脉宽调制控制电路 [PULSE-WIDTH-MODULATION CONTROL CIRCUITS]
分类和应用: 光电二极管
文件页数/大小: 12 页 / 168 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage (Note 2)
Amplifier Input Voltage
Collector Output Voltage
Collector Output Current
Package Thermal Impedance
(Note 3)
Lead Temperature 1.6mm from case for 10 seconds
Storage Temperature Range
ESD rating (Machine Model)
T
STG
Symbol
V
CC
V
I
V
O
I
O
θ
JA
M Package
P Package
260
-65 to 150
200
Value
40
-0.3 to V
CC
+ 0.3
40
250
73
67
o
AZ494B/D
Unit
V
V
V
mA
o
C/W
C
o
C
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of T
J
(max),
θ
JA
and T
A
. The maximum allowable power dissi-
pation at any allowable ambient temperature is P
D
= ( T
J
(max) - T
A
) /
θ
JA
. Operating at the absolute maximum T
J
of 150
o
C can affect reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Amplifier Input Voltage
Collector Output Voltage
Collector Output Current
(Each Transistor)
Current Into Feedback Terminal
Oscillator Frequency
Timing Capacitor
Timing Resistor
Operating Free-Air Temperature
Reference Output Current
f
osc
C
T
R
T
T
A
I
REF
0.47
1.8
-40
Symbol
V
CC
V
I
V
O
Min
7
-0.3
Max
36
V
CC
- 2
36
200
0.3
300
10000
500
85
10
Unit
V
V
V
mA
mA
KHz
nF
KΩ
o
C
mA
Jun. 2005 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4