BLH3355
NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF transistor for
microwave low-noise amplification
Features
Low noise and high gain bandwidth product
High power gain
Applications
UHF / VHF wide band amplifier
Structure
Planar type
Electrodes: Aluminum alloy
Backside metal: Au alloy
Size
Chip size: 370µm ×370µm
Chip thickness: 220±20µm.
Pad size:
φ100µm
ABSOLUTE MAXIMUM RATING
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3.0
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
Symbol
I
CBO
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test conditions
V
CB
=10V, I
E
=0mA
V
EB
=1.0V, I
C
=0mA
V
CE
=10V, I
C
=20mA
Min.
-
-
50
Typ.
-
-
120
Max.
1.0
1.0
250
Unit
µA
µA
nA
o
http://www.belling.com.cn
-1-
Total
2 Pages
8/18/2006
BELLING [ SHANGHAI BELLING CO., LTD. ]
