BLV640
N-channel Enhancement Mode Power MOSFET
•
•
•
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BV
DSS
R
DS(ON)
I
D
200V
0.18Ω
Ω
18A
Description
This advanced low voltage MOSFET is produced
using Belling’s proprietary MOS technology.
Designed for high efficiency switch mode power supply
.
Absolute Maximum Ratings
(
T
C
=25
o
C unless otherwise noted )
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
Tj
T
SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current (
T
C
=100
o
C
)
Drain Current (pulsed) (Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
Value
200
+ 30
18
11
72
125
1.0
580
18
13
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o
o
C
C
Thermal Characteristics
Symbol
R
th j-c
R
th j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Max.
Max.
Value
0.5
62.5
Units
℃/
W
℃/
W
http://www.belling.com.cn
-1-
Total 6 Pages
2008.08.08
BELLING [ SHANGHAI BELLING CO., LTD. ]
