BCL016B
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)
The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate
width making the product ideally suited for applications requiring very low noise and high associated gain, in
frequencies of up to 40 GHz. The BCL016B offers high insertion gain and a low noise figure for broadband
applications. The BCL016B is produced using state of the art metallization with SI
3
N
4
passivation and is screened to
assure reliability
PRODUCT FEATURES
Low 0.4dB typical noise figure @12 GHz
High 13.5dB Typical associated Gain @12 GHz
High P
in
of up to 20dBm
0.15 X 160 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTICS (T
a
= 25° C
)
SYMBOL
NF
G
A
P1dB
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETER/TEST CONDITIONS
Noise Figure (Vds = 2V, Id = 10mA)
Associated Gain (Vds = 2V, Id = 10mA)
Output Power @ p1dB (Vds = 2V, Id = 10mA)
Saturated Drain Current (Vgs = 0V, Vds = 2V)
Transconductance (Vds = 2V, Vgs = -0.3V)
Pinch-off Voltage (Vds = 2V, Id = 200µA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
TYPICAL
0.4
0.6
Max.
UNIT
dB
dB
dBm
mA
mS
V
V
V
° C/W
12.5
10.5
13
13.5
11.5
14.5
50
120
-0.7
9
6
270
Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)
Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)
Thermal Resistance, junction to back side
(Au-Sn Eutectic Attach)
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7
st
BEREX [ BEREX CORPORATION ]
