BCP020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP020T is produced using state of the art metallization with SI
3
N
4
passivation and is screened to
assure reliability.
PRODUCT FEATURES
24 dBm Typical Output Power
14 dB Typical Gain @ 12 GHz
0.25 X 200 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T
a
= 25° C
SYMBOL
P
1dB
G
1dB
PAE
NF
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 8V, I
ds
= 50%
I
dss
)
Gain @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
50 Ohm Noise Figure (V
ds
=2V, I
ds
=10 mA
Saturated Drain Current (V
gs
= 0V, V
ds
= 3V)
Transconductance (V
ds
= 3V, V
gs
= 50% I
dss
)
Pinch-off Voltage (I
ds
= 0.3 mA, V
ds
= 3V)
Drain Breakdown Voltage (I
g
= 0.6 mA, source open)
Source Breakdown Voltage (I
g
= 0.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
-2.5
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
40
MIN.
22.5
12.0
TYPICAL
24.0
24.0
14.0
12.0
60
55
1.09
60
80.0
-1.1
-15
-13
160
-0.5
-12
80
MAX.
UNIT
dBm
dB
%
dB
mA
mS
V
V
V
° C/W
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
st
September 2011
BEREX [ BEREX CORPORATION ]
