BCP080T-70
HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 800µm gate)
The BeRex BCP080T-70 is a GaAs power pHEMT in an industry standard, 70 mil. ceramic, low parasitic, surface-
mountable package. It’s 0.25µm by 800 µm recessed gate architecture provides high gain, high power and
excellent PAE over a broad frequency range of 1000 MHz to 26 GHz.
PRODUCT FEATURES
70 mil. surface-mount ceramic package
27.5dBm P1dB @12 GHz (typical)
9.5dB Gain @12 GHz (typical)
65% PAE @12 GHz (typical)
RoHS-compliant/lead-free
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T
a
= 25° C
SYMBOLS
P
1dB
G
1dB
PAE
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
Gain @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
Saturated Drain Current (V
gs
= 0V, V
ds
= 2.0V)
Transconductance (V
ds
= 3V, Vgs = 50% I
dss
)
Pinch-off Voltage (I
ds
= 0.2 mA, V
ds
= 2V)
Drain Breakdown Voltage (I
g
= 0.2 mA, source open)
Source Breakdown Voltage (I
g
= 0.2 mA, drain open)
Thermal Resistance
-2.5
TEST
FREQUENCY
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
26.0
26.0
9.0
4.0
TYPICAL
27.5
27.5
9.5
5.5
65
50
240
320
-1.1
-15
-13
135
-0.5
Max
UNIT
dBm
dB
%
320
mA
mS
V
V
V
° C/W
160
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2012
st
September 2012
Rev. A
BEREX [ BEREX CORPORATION ]
