BCP160T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T
a
= 25° C
SYMBOL
P
1dB
G
1dB
PAE
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
Gain @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(Vds = 8V, Ids = 50% Idss)
Saturated Drain Current (V
gs
= 0V, V
ds
= 1.0V)
Transconductance (V
ds
= 3V, V
gs
= 50% I
dss
)
Pinch-off Voltage (I
ds
= 1.6 mA, V
ds
= 2V)
Drain Breakdown Voltage (I
gd
= 1.6 mA, source open)
Source Breakdown Voltage (I
g
= 1.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
TEST
FREQ.
12 GHZ
12 GHZ
12 GHZ
320
-2.5
MIN.
29.5
10.0
TYPICAL
30.5
11.0
40.0
480
640
-1.1
-15
-13
33
640
-0.5
-12
MAX.
UNIT
dBm
dB
%
mA
mS
V
V
V
° C/W
MAXIMUM RATING (T
a
= 25° C)
SYMBOL
V
ds
V
gs
I
ds
I
gsf
P
in
T
ch
T
stg
P
t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I
dss
80 mA
30 dBm
175° C
-60° C - 150° C
6.0 W
CONTINUOUS
8V
-3 V
I
dss
14 mA
@ 3 dB Compression
150° C
-60° C - 150° C
5.0 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
P
IN
_P
OUT
/Gain, PAE (12 GHz)
Frequency = 12GHz
V
ds
= 8 V, I
ds
= 50% I
dss
(Tuned for Power)
Frequency = 12GHz
V
ds
= 8 V, I
ds
= 50% I
dss
(Tuned for Gain)
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
st
September 2011
BEREX [ BEREX CORPORATION ]
