BCP240T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
The BeRex BCP240T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 2400 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP240T is produced using state of the art metallization with SI
3
N
4
passivation and is screened to
assure reliability.
PRODUCT FEATURES
34 dBm Typical Output Power
10 dB Typical Gain @ 12 GHz
0.25 X 2400 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T
a
= 25° C
SYMBOL
P
1dB
G
1dB
PAE
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 8V, I
ds
= 50%
I
dss
)
Gain @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
Saturated Drain Current (V
gs
= 0V, V
ds
= 1.2V)
Transconductance (V
ds
= 2V, V
gs
= 50% I
dss
)
Pinch-off Voltage (I
ds
= 2.4 mA, V
ds
= 2V)
Drain Breakdown Voltage (I
g
= 2.4 mA, source open)
Source Breakdown Voltage (I
g
= 2.4 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
-2.5
TEST
FREQ.
12 GHZ
12 GHZ
12 GHZ
480
MIN.
33.5
9.0
TYPICAL
34.5
10.0
55
720
960
-1.1
-15
-13
23
-0.5
-12
960
MAX.
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
st
September 2011
BEREX [ BEREX CORPORATION ]
