The XENSIV™ TLE4999I3 provides all means that are necessary to fulfill the state-of-the-art functional safety requirements on system level. It is developed in full compliance with ISO 26262. The device provides high redundancy on one chip by means of two sensor elements included within one monolithic silicon design. The two diverse Hall sensor elements („main” and „sub”) have internally separated signal paths within the chip. A plausibility check secures the high diagnostic coverage required for premium functional safety compliant systems up to ASIL-D.
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
