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1N60 参数 Datasheet PDF下载

1N60图片预览
型号: 1N60
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2安培, 600伏特N沟道MOSFET [1.2 Amps, 600 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 2 页 / 51 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号1N60的Datasheet PDF文件第2页  
BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40V
CURRENT: 0.03 A
1N
6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction
High current capability,low forward voltage drop
Extrem ely low revers e current I
R
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
ffffff
characteris tics
Satis factory wave detection efficiency
For us e in RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
DO - 35(GLASS)
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Parameters
Repetitive peak reverse voltage
Forw ard continuous current
Peak f orw ard surge current (t=Is)
Storage and junction temperature range
Maximum lead temperature f or soldering during 10s at 4mm f rom case
Symbols
V
RRM
T
A
=25
I
F
I
FSM
T
STG
/T
J
T
L
Value
1N60
40.0
30.0
150.0
XX-
55 ---- + 150
230
UNITS
V
mA
mA
ELECTRICAL CHARACTERISTICS
Parameters
Symbols
Test Conditions
I
F
=1m A
1N60
1N60
1N60
1N60
Min.
Value
Typ.
0.32
0.65
0.1
2
60.0
Max.
0.5
UNITS
Forward voltage
V
F
I
F
=30m A
1.0
0.5
V
Reverse current
Junction capacitance
Detection efficiency (See FIG. 4)
Reverse recovery time
Therm al res is tance,junction to am bient
I
R
C
J
V
R
=15V
V
R
=1V f=1MHz
A
pF
%
V
l
=3V f=30MHz
C
L
=10
P
F R
L
=3.8K
t
rr
R
θ
J A
I
F
=I
R
=10m A t
rr
=1m A ,R
L
=100
400
1
ns
/W
www.galaxycn.com
Document Number 0265003
BL
GALAXY ELECTRICAL
1.