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1SS372 参数 Datasheet PDF下载

1SS372图片预览
型号: 1SS372
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基二极管 [Schottky Barrier Diode]
分类和应用: 肖特基二极管
文件页数/大小: 2 页 / 112 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号1SS372的Datasheet PDF文件第2页  
BL
Galaxy Electrical
Schottky Barrier Diode
FEATURES
Small surface mounting type.
Small package.
Low forward voltage:V
F
=0.23V(typ).
Production specification
1SS372
Pb
Lead-free
APPLICATIONS
For general purpose applications.
SOT-323
ORDERING INFORMATION
Type No.
1SS372
Marking
N9
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Diode reverse voltage
Forward continuous Current
Forward Surge Current (10ms)
Power Dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
F
I
FSM
P
d
T
j
T
stg
Limits
15
10
200
1
100
125
-55-+125
Unit
V
V
mA
A
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Reverse current
Forward voltage
Diode capacitance
Symbol
I
R
V
F
C
D
Test
conditions
V
R
=10V
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=0V, f=1MHz
0.18
0.3
0.5
40
pF
MIN
Typ.
MAX
20
UNIT
μA
V
Document number: BL/SSSKF013
Rev.A
www.galaxycn.com
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