BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test conditions
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
B
Production specification
2SA1036
MIN
-40
-32
-5
-1
-1
82
390
-0.4
V
TYP
MAX
UNIT
V
V
V
μA
μA
I
E
=-100μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-10mA
I
C
=-100mA, I
B
=-10mA
B
Transition frequency
f
T
V
CE
=-5V, I
C
=-20mA
f=100MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
7
pF
CLASSIFICATION
Rank
Range
OF
h
FE(1)
P
82-180
Q
120-270
R
180-390
Document number: BL/SSSTC012
Rev.A
www.galaxycn.com
2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
