BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Commplementary to 2SC1623.
High DC current gain:h
FE
=200typ.
(V
CE
=-6.0V,I
C
=-1.0mA)
High Voltage: V
CEO
=-50V
Production specification
2SA812
Pb
Lead-free
APPLICATIONS
Audio frequency, general purpose amplifier
SOT-23
ORDERING INFORMATION
Type No.
2SA812
Marking
M4/M5/M6/M7
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
-60
-50
-5
-100
200
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTC010
Rev.A
www.galaxycn.com
1
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
