BL
Galaxy Electrical
PNP General Purpose Amplifier
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Symbol
Production specification
BC807-16/-25/-40
unless otherwise specified
MIN
MAX
UNIT
Test conditions
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-10μA I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-10mA I
B
=0
B
-45
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16
807-25
807-40
V
(BR)EBO
I
CBO
I
CEO
I
EBO
I
E
=-1μA I
C
=0
V
CB
=-45V I
E
=0
V
CE
=-40V
V
CE
=-4V
I
B
=0
B
-5
-0.1
-0.2
-0.1
100
160
250
250
400
600
-0.7
μV
μA
μA
μA
I
C
=0
h
FE
V
CE
=-1V I
C
=-100mA
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=-500mA I
B
=-50mA
B
V
Base-emitter saturation voltage
I
C
=-500mA I
B
=-50mA
B
-1.2
V
Transition frequency
f
T
V
CE
=-5V
f=100MHz
I
C
=-10mA
100
MHz
Document number: BL/SSSTC041
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
