BL
Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
FEATURES
Ideally suited for automatic insertion.
Power dissipation.(P
C
=200mW)
Pb
Lead-free
APPLICATIONS
General purpose switching and amplification application.
ORDERING INFORMATION
Type No.
BC856W
BC857W
BC858W
Marking
3As/3Bs
3E/3F/3G
3J/3K/3L
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Collector-Base Voltage
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
Value
-80
-50
-30
-65
-45
-30
-5
-100
200
-65~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF046
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
