BL
FEATURES
GALAXY ELECTRICAL
GBU4A --- GBU4M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
Glass passivated chip junctions
GBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
.310(7.9)
.290(7.4)
0
.140(3.56)
.130(3.30)
+
+
.075(1.9)R.TYP.
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
_
.080(2.03)
.060(1.52)
~
~
+
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
4A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
@T
A
=40
GBU
4B
100
70
100
GBU
4D
200
140
200
GBU
4G
400
280
400
4.0
3.0
150.0
GBU
4J
600
420
600
GBU
4K
800
560
800
GBU
4M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
50
35
50
(note 1)
(note 2)
I
F (AV)
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(note 2)
(note 1)
Operating junction temperature range
Storage temperature range
I
F SM
A
V
F
I
R
C
J
R
θJA
R
θJC
T
J
T
STG
100
1.0
5.0
500.0
45
22.0
4.2
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
pF
/W
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.
2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
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Document Number 0287025
BL
GALAXY ELECTRICAL
1.