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GBU8D 参数 Datasheet PDF下载

GBU8D图片预览
型号: GBU8D
PDF下载: 下载PDF文件 查看货源
内容描述: 硅桥式整流器 [SILICON BRIDGE RECTIFIERS]
分类和应用:
文件页数/大小: 2 页 / 104 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号GBU8D的Datasheet PDF文件第2页  
BL
FEATURES
GALAXY ELECTRICAL
GBU8A - - - GBU8M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to
200
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
GBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
0
.140(3.56)
.130(3.30)
+
+
.075(1.9)R.TYP.
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
_
.080(2.03)
.060(1.52)
~
~
+
Glass passivated junctions
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
GBU
8A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
C
=100
GBU
8B
100
70
100
GBU
8D
200
140
200
GBU
8G
400
280
400
8.0
GBU
8J
600
420
600
GBU
8K
800
560
800
GBU
8M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
I
FSM
200.0
A
V
F
I
R
T
J
T
STG
1.0
5.0
0.5
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287027
BL
GALAXY ELECTRICAL
1.