BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
B
Production specification
KTC3875
MIN
60
50
5
0.1
0.1
70
0.1
80
2.0
1.0
3.5
10
700
0.25
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA, I
B
=10mA
B
V
CE
=10V, I
C
= 1mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=6V,I
C
=0.1mA,
F=1KHz,R
g
=10KΩ
CLASSIFICATION
Rank
Range
Marking
OF
O
70-140
ALO
h
FE
Y
120-240
ALY
GR
200-400
ALG
BL
350-700
ALL
Document number: BL/SSSTC056
Rev.A
www.galaxycn.com
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
