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MBR2080CT 参数 Datasheet PDF下载

MBR2080CT图片预览
型号: MBR2080CT
PDF下载: 下载PDF文件 查看货源
内容描述: 双肖特基整流器 [DUAL SCHOTTKY RECTIFIERS]
分类和应用: 二极管局域网
文件页数/大小: 2 页 / 153 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号MBR2080CT的Datasheet PDF文件第2页  
BL
GALAXY ELECTRICAL
DUAL
SCHOTTKY RECTIFIERS
FEATURES
High surge capacity.
For use in low voltage, high frequency inverters, free
111
wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MBR2070CT - - - MBR20100CT
VOLTAGE RANGE:
70
-
100
V
CURRENT: 20 A
TO-220AB
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
11
Method 2026
Polarity: As marked
Weight: 0.08 ounce, 2.24 grams
Position: Any
�½��½�
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MBR2070CT MBR2080CT MBR2090CT MBR20100CT UNITS
Maximum recurrent peak reverse voltage
Maximum w orking peak reverse voltage
Maximum DC blocking voltage
Maximum average forw ard total device1
111rectified
current
@ T
C
= 133
Peak forw ard surge current 8.3 ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage per leg
(NOTE 1)
(I
F
=10A,T
C
=25 )
(I
F
=10A,T
C
=125 )
(I
F
=20A,T
C
=25 )
(I
F
=20A,T
C
=125 )
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
70
49
70
80
56
80
20.0
90
63
90
100
70
100
V
V
V
A
150.0
0.85
A
V
F
0.70
0.95
0.85
V
I
R
C
T
T
J
T
STG
0.1
6.0
400
-
55
---- + 150
-
55
---- + 175
mA
pF
Maximum junction capacitance
(NOTE2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2.
V
R
=5V
DC
,(test signal range 100KHz to 1MHz
www.galaxycn.com
Document Number 0267014
BL
GALAXY ELECTRICAL
1.