BL
FEATURES
GALAXY ELECTRICAL
MBRF1030 - - - MBRF10100
VOLTAGE RANGE: 30 -
100
V
CURRENT: 10 A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
ITO-220AC
0.188(4.77)
0.172(4.36)
0.405(10.27)
0.383(9.72)
0.140(3.56)
0.130(3.30)
0.676(17.2)
0.646(16.4)
DIA
0.110(2.80)
0.100(2.54)
0.131(3.39)
0.122(3.08)
DIA
0.600(15.5)
0.580(14.5)
0.350(8.89)
0.330(8.38)
PIN
1
2
0.560(14.22)
0.530(13.46)
MECHANICAL DATA
Cas e:JEDEC
ITO-220AC,m
olded plas tic body
0.191(4.85)
0.171(4.35)
0.060(1.52)
0.110(2.80)
0.100(2.54)
0.105(2.67)
0.095(2.41)
0.037(0.94)
0.027(0.69)
PIN1
0.205(5.20)
0.195(4.95)
PIN2
0.022(0.55)
0.014(0.36)
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.064 ounces,1.81 gram
Dimensions in inches and(millimeters)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
1030
1035 1040 1045 1050 1060 1090 10100
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 133°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=10A,T
C
=25
(I
F
=10A,T
C
=125
(I
F
=20A ,T
C
=25
(I
F
=20A ,T
C
=125
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
)
)
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
35
25
35
40
28
40
45
32
45
10
150
50
35
50
60
42
60
90
63
90
100
70
100
V
V
V
A
A
-
0.80
0.70
0.95
0.85
0.1
15
4.0
-
55
---- + 150
-
55
---- + 175
0.80
0.65
0.95
0.75
mA
/W
V
V
F
0.57
0.84
0.72
I
R
R
θJC
T
J
T
STG
6.0
3)
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T
C
=100
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Document Number 0267031
BL
GALAXY ELECTRICAL
1.
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
