BL
Galaxy Electrical
NPN General Purpose Amplifier
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test conditions
I
C
=10μA I
E
=0
Production specification
MMBT2369A
MIN
40
TYP
MAX
UNIT
V
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
V
(BR)CEO
I
C
=10mA I
B
=0
B
15
V
V
(BR)EBO
I
CBO
h
FE
I
E
=10μA I
C
=0
V
CB
=20V I
E
=0
V
CE
=1.0V I
C
=10mA
V
CE
=0.35V I
C
=10mA
V
CE
=0.4V I
C
=30mA
V
CE
=0.4V I
C
=30mA
4.5
0.4
120
40
30
20
0.2
0.25
0.5
0.7
0.85
1.15
1.6
4.0
5.0
8.0
10
13
12
18
V
μA
Collector-emitter saturation
voltage
Base-emitter saturation voltage
V
CE(sat)
I
C
=10mA I
B
=1.0mA
I
C
=30mA I
B
=3.0mA
I
C
=100mA I
B
=10mA
B
B
B
V
V
BE(sat)
I
C
=10mA I
B
=1.0mA
I
C
=30mA I
B
=3.0mA
I
C
=100mA I
B
=10mA
B
B
B
V
Output capacitance
Storage time
Turn-on time
Turn-off time
C
obo
t
S
t
on
t
off
V
CB
=5V,I
E
=0.f=1.0MHz
I
B1
=I
B2
=I
C
=10mA
V
CC
=3V,I
C
=10mA,
I
B1
=3mA
V
CC
=3V,I
C
=10mA,
I
B1
=3mA,I
B2
=1.5mA
pF
ns
ns
ns
Document number: BL/SSSTC115
Rev.A
www.galaxycn.com
2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
