BL
Galaxy Electrical
NPN SWITCHING TRANSISTOR
FEATURES
Epitaxial planar die construction.
Complementary PNP type available
(MMBT3906).
Collector Current Capability I
c
=200mA.
Collector-emitter Voltage V
CEO
=40V.
Production specification
MMBT3904
Pb
Lead-free
APPLICATIONS
General switching and amplification
SOT-23
ORDERING INFORMATION
Type No.
MMBT3904
Marking
1AM
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Transistor mounted on an FR4 printed-circuit board.
Tamb≤25°C
CONDITIONS
open emitter
open base
open collector
MIN.
60
40
6
-
-
-
-
-65
-
-65
MAX.
-
-
-
200
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
