BL
Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT5551).
Also available in lead free version.
Production specification
MMBT5401
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT5401
Marking
2L
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
,T
stg
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
Test
conditions
Value
-160
-150
-5
-0.6
0.3
-55-150
MIN.
-160
-150
-5
-
-
50
60
50
-
-
100
-0.1
-0.1
-
250
-
-0.5
-1
-
V
V
MHz
μA
μA
MAX.
UNIT
V
V
V
A
W
°C
UNIT
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
B
I
E
=-10μA,I
C
=0
I
E
= 0; V
CB
= -120V
I
C
= 0; V
EB
= -4V
V
CE
= -5V; I
C
= -1mA
V
CE
= -5V;I
C
= -10mA
V
CE
= -5V;I
C
= -50 mA
I
C
= -50 mA; I
B
= -5 mA
B
I
C
= -50 mA; I
B
= -5 mA
B
I
C
= -10mA; V
CE
= -5V;
f = 30MHz
Document number: BL/SSSTC075
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
