BL
Galaxy Electrical
NPN General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary PNP type available
(MMBT5401).
Also available in lead free version.
Production specification
MMBT5551
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT5551
Marking
G1
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
,T
stg
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
Test
conditions
Value
180
160
6
0.6
0.3
-55-150
MIN.
180
160
6
-
-
80
80
30
-
-
80
0.1
0.1
-
250
-
0.5
1
-
V
V
MHz
μA
μA
MAX.
UNIT
V
V
V
A
W
°C
UNIT
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
I
C
=100μA,I
E
=0
I
C
=0.1mA,I
B
=0
B
I
E
=100μA,I
C
=0
I
E
= 0; V
CB
= 180V
I
C
= 0; V
EB
= 4V
V
CE
= 5V; I
C
= 1mA
V
CE
= 5V;I
C
= 10mA
V
CE
= 5V;I
C
= 50 mA
I
C
= 50 mA; I
B
= 5 mA
B
I
C
= 50 mA; I
B
= 5 mA
B
I
C
= 10mA; V
CE
= 10V;
f = 100MHz
Document number: BL/SSSTC065
Rev.A
www.galaxycn.com
1