BL
Galaxy Electrical
NPN General Purpose Transistor
Symbol
V
(BR)CBO
Parameter
Collector-base breakdown voltage
MMBTA13
MMBTA14
Collector-emitter breakdown voltage
MMBTA13
MMBTA14
Emitter-base breakdown voltage
collector cut-off current
collector cut-off current
DC current gain
h
FE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
Test
Production specification
MMBTA13/MMBTA14
conditions
MIN.
30
30
30
30
10
-
-
5000
10000
10000
20000
-
125
MAX.
-
UNIT
V
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
I
C
=100μA,I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
C
=0.1mA,I
B
=0
B
-
-
0.1
0.1
V
V
μA
μA
I
E
=100μA,I
C
=0
I
E
= 0; V
CB
= 30V
I
E
= 0; V
CE
= 10V
V
CE
= 5V; I
C
= 10mA
V
CE
= 5V;I
C
= 10mA
V
CE
= 5V;I
C
= 100mA
V
CE
= 5V;I
C
= 100mA
I
C
= 100mA; I
B
= 0.1mA
B
-
V
CE(sat)
f
T
collector-emitter saturation voltage
transition frequency
1.5
-
V
MHz
I
C
= 10mA; V
CE
= 5.0V;
f = 100MHz
PACKAGE OUTLINE
Plastic surface mounted package
A
E
SOT-23
SOT-23
Dim
A
B
C
D
E
G
H
C
Min
2.85
1.25
0.37
0.35
1.85
0.02
2.35
Max
2.95
1.35
0.43
0.48
1.95
0.1
2.45
K
B
1.0Typical
D
G
J
H
J
K
0.1Typical
All Dimensions in mm
Document number: BL/SSSTC121
Rev.A
www.galaxycn.com
2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
