BL
Galaxy Electrical
NPN High Voltage Amplifier
FEATURES
Epitaxial planar die construction.
Complementary PNP type available
(MMBTA92).
Ideal for medium power amplification and switching.
Production specification
MMBTA42
Pb
Lead-free
APPLICATIONS
NPN High voltage amplifier.
SOT-23
ORDERING INFORMATION
Type No.
MMBTA42
Marking
1D
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
,T
stg
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector output capacitance
transition frequency
Test
conditions
Value
300
300
6
0.2
0.35
-55-150
MIN.
300
300
6
-
-
25
40
40
-
-
MAX.
-
-
-
0.1
0.1
-
-
-
0.5
0.9
3.0
50
-
V
V
pF
MHz
UNIT
V
V
V
A
W
°C
UNIT
V
V
V
μA
μA
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
I
C
=100μA,I
E
=0
I
C
=1.0mA,I
B
=0
B
I
E
=100μA,I
C
=0
I
E
= 0; V
CB
= 200V
I
C
= 0; V
EB
= 6V
V
CE
=10V; I
C
=1mA
V
CE
=10V;I
C
=10mA
V
CE
=10V;I
C
=30mA
I
C
=20mA; I
B
=2mA
B
I
C
=20mA; I
B
=2mA
B
V
CB
=20V,I
E
=0;f=1.0MHz
I
C
=10mA; V
CE
=20V
f=100MHz
Document number: BL/SSSTC076
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
