BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(P
C
=200mW)
Epitaxial planar die construction.
Also available in lead free version.
Production specification
MMST4403
Pb
Lead-free
APPLICATIONS
General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No.
MMST4403
Marking
K3T
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Value
-40
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-40
-5
-600
V
V
mA
Collector Dissipation
Junction and Storage Temperature
200
-55~150
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF054
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
