BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
High Collector Current.(I
C
= 500mA）
Complementary To S9012.
Excellent H
FE
Linearity.
Power dissipation.(P
C
=300mW)
Production specification
S9013
Pb
Lead-free
APPLICATIONS
High Collector Current.
SOT-23
ORDERING INFORMATION
Type No.
S9013
Marking
J3
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
40
25
5
500
300
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTC082
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
