BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
High current gain bandwidth product.
power dissipation.(P
C
=200mW)
Production specification
S9018
Pb
Lead-free
APPLICATIONS
NPN epitaxial silicon transistor.
ORDERING INFORMATION
Type No.
S9018
Marking
J8
SOT-23
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
25
18
4
50
200
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Document number: BL/SSSTC085
Rev.A
unless otherwise specified
MIN
25
18
4
0.1
0.1
0.1
70
190
0.5
1.4
600
V
V
MHz
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1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
=100μA,I
E
=0
I
C
=0.1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=20V,I
E
=0
V
CE
=15V,I
B
=0
V
EB
=3V,I
C
=0
V
CE
=5V,I
C
=1mA
I
C
=10 mA, I
B
= 1mA
I
C
=10 mA, I
B
= 1mA
V
CE
=5V, I
C
= 5mA
f=400MHz
TYP
MAX
UNIT
V
V
V
μA
μA
μA
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
