BL
FEATURES
GALAXY ELECTRICAL
SB120 - - - SB1A0
VOLTAGE RANGE: 20 ---
100
V
CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIER
◇
Metal-Semiconductor junction with guard ring
◇
Epitaxial construction
◇
Low forward voltage drop,low switching losses
◇
High surge capability
◇
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
◇
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
◇
Case:JEDEC DO--41,molded plastic
◇
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
◇
Polarity: Color band denotes cathode
◇
Weight: 0.012 ounces,0.34 grams
◇
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
120
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125℃
(see fig.1)
SB
130
30
21
30
SB
140
40
28
40
SB
150
50
35
50
SB
160
60
42
60
1.0
SB
170
70
49
70
SB
180
80
56
80
SB
190
90
63
90
SB
UNITS
1A0
100
70
100
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
I
FSM
40.0
A
Maximum instantaneous forward voltage
@ 1.0A
Maximum reverse current
@T
A
=25℃
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.5
0.7
0.5
0.85
V
mA
pF
℃/W
℃
℃
www.galaxycn.com
at rated DC blocking voltage @T
A
=100℃
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
10.0
110
50
- 55 --- + 125
5.0
80
- 55 --- + 150
- 55 --- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
Document Number 0266004
BL
GALAXY ELECTRICAL
1.