BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
BEF
Test conditions
I
C
=-100μA,I
E
=0
I
C
=-0.1mA,I
B
=0
B
Production specification
SS8550
unless otherwise specified
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
40
-0.5
-1.2
100
20
-1.6
V
V
MHz
pF
V
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
E
=-100μA,I
C
=0
V
CB
=-40V,I
E
=0
V
CE
=-20V,I
B
=0
B
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-100mA
V
CE
=-1V,I
C
=-800mA
I
C
=-800mA, I
B
= -80mA
B
I
C
=-800mA, I
B
= -80mA
B
V
CE
=-10V, I
C
= -50mA
f=30MHz
V
CB
=-10V,I
E
=0,f=1MHz
I
E
=-1.5A
CLASSIFICATION
Rank
Range
OF
h
FE(1)
L
120-200
H
200-350
J
300-400
Document number: BL/SSSTC087
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
