ELECTRICAL CHARACTERISTICS
FET
Parameter
Drain Leakage Current
Symbol
I
DSS
On-State Voltage
V
DS(on)
Threshold Voltage
Gate Leakage Current
V
GS(th)
I
GSS
Diode Forward Voltage
V
SD
Input Capacitance
C
iss
Gate Resistor
R
G
Junction Temperature
Thermal Resistance
T
j
R
thjc
D1-D4
Reverse Leakage Current
Forward Voltage
Junction Temperature
Thermal Resistance
D5
Forward Voltage
Forward Voltage
Reverse Leakage Current
Reverse Leakage Current
Reverse Recovery Time
Reverse Recovery Time
Junction Temperature
Thermal Resistance
TH1
Resistance
Resistance Ratio
I
R
V
F
T
j
R
thjc
V
F
V
F
I
R
I
R
t
rr
t
rr
T
j
R
thjc
R
25
R
T
/R
25
7720-X
-1
-2
-3
I
DS
= 28A, V
GS
= 10V
-1
I
DS
= 21A
-2
I
DS
= 14A
-3
V
DS
= 4V, I
DS
= 1mA
-1,-2,-3
V
GS
= ±15V, V
DS
= 0V
-1
-2
-3
I
SD
= 50A, V
GS
= 0V
-1
I
SD
= 37.5A
-2
I
SD
= 25A
-3
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz -1
-2
-3
-1
-2
-3
-1,-2,-3
-1
-2
-3
V
R
= 600V
-1,-2,-3
I
F
= 25A
-1,-2
I
F
= 18A
-3
-1,-2,-3
-1,-2
-3
I
F
= 25A
-1,-2
I
F
= 18A
-3
I
F
= 25A, t = 150°C
-1,-2
I
F
= 18A
-3
V
R
= 600V
-1,-2,-3
V
R
= 600V, t = 150°C
-1,-2,-3
I
F
= 1.0A, di/dt = 100A/µs
-1,-2,-3
I
F
= 25A, di/dt = 100A/µs
-1,-2,-3
-1,-2,-3
-1,-2
-3
I = 1mA
t = 80
t = 90
t = 100
t = 110
Conditions
1
V
DS
= 500V, V
GS
= 0V
Min.
Typ.
2.0
2.2
2.2
2.2
3.0
0.95
0.95
0.95
12
9
6
1.28
1.70
2.55
0.19
0.25
0.38
1
1.0
1.0
1.3
1.4
1.5
1.5
1.3
1.3
1
0.3
30
40
Max.
1.0
750
500
2.9
2.9
2.9
4.0
±2
±1.5
±1
1.5
1.5
1.5
150
250
1.2
1.2
150
2.8
2.8
2.5
2.5
500
1.5
40
45
175
22.5
1.3
1.4
25
27.5
0.126
0.0916
0.0679
0.0511
10
Units
mA
µA
µA
V
V
V
V
µA
µA
µA
V
V
V
nF
nF
nF
Ω
Ω
Ω
°C
°C/W
°C/W
°C/W
µA
V
V
°C
°C/W
°C/W
V
V
V
V
µA
mA
ns
ns
°C
°C/W
°C/W
KΩ
Dissipation Constant
Thermal Time Constant
P
D
t
1.0
mW/°C
sec
1 - T
Case
= 25°C unless otherwise specified.
7-28
Model 7720 Series
BITECH [ BI TECHNOLOGIES ]
