PNP SILICON PLANAR TRANSISTOR
2N4036
TO-39
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
VCEO
65
Collector -Emitter Voltage
VCBO
90
Collector -Base Voltage
VEBO
7.0
Emitter Base Voltage
IB
0.5
Base Current
IC
1.0
Collector Current -Continuous
PD
5.0
Power Dissipation @ Tc=25 deg C
28.6
Linear Derating Factor
PD
1.0
Power Dissipation @ Ta=25 deg C
5.72
Linear Derating Factor
Tj, Tstg
-65 to +200
Operating & Storage Junction
Temperature Range
TL
230
Lead Temperature 1/16" from Case
for 10 Seconds
Thermal Resistance
Rth (j-c)
35
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VCEO IC=10mA, IB=0
Collector -Emitter Voltage
VCBO IC=100uA, IE=0
Collector -Base Voltage
ICEX VCE=85V, VBE=1.5V
Collector Cut off Current
ICBO VCB=90V, IE=0
IEBO VBE=7V, IC=0
Emitter Cut off Current
hFE
0.1mA, VCE=10V
DC Current Gain
IC=150mA, VCE=2V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
VCE(sat) IC=150mA, IB=15mA
Collector -Emitter (sat) Voltage
VBE(sat) IC=150mA, IB=15mA
Base -Emitter (sat) Voltage
Small- Signal Characteristics
lhfel
IC=50mA,VCE=10V, f=20MHz
Current Gain- High Frequency
Switching Characteristics
Rise time
Sorage time
Fall time
Turn-on time
Turn-off time
UNIT
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
deg C
deg C/W
MIN
65
90
-
-
-
20
20
40
20
-
-
3.0
TYP
-
-
-
MAX
-
0.1
1.0
10
-
200
140
-
0.65
1.4
-
UNIT
V
V
mA
uA
uA
-
-
V
V
-
tr
ts
tf
ton
toff
IB1=15mA,IC=150mA, VCE=30V
IB2=15mA,IC=150mA, VCE=30V
IB2=15mA,IC=150mA, VCE=30V
IC=150mA, VCE=30V, IB1=IB2=
15mA
-
-
-
-
-
70
600
100
110
700
ns
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 2
BOCA [ BOCA SEMICONDUCTOR CORPORATION ]
