NPN SILICON EPITAXIAL TRANSISTOR
2N4923
TO-126
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter Base Voltage
IC
Collector Current Continuous
IB
Base Current
PD
Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
Tj, Tstg
Operating And Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
TL
from Body for 10 Seconds.
Thermal Resistance
Rth (j-c)
Junction to Case
VALUE
80
80
5.0
3.0
1.0
30
0.24
-65 to +150
260
UNIT
V
V
V
A
A
W
W/deg C
deg C
deg C
4.16
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
VCEO(sus) IC=100mA, IB=0
Collector -Emitter Sustaining Voltage
ICEO
VCE=40V, IB=0
Collector Cut off Current
ICBO
VCB=80V, IE=0
ICEX
VCB=80V,VEB(0ff)=1.5V
Tc=125 deg C
VCB=80V,VEB(0ff)=1.5V
IEBO
VEB=5V, IC=0
Emitter Cut off Current
hFE *
IC=50mA,VCE=1V
DC Current Gain
IC=500mA,VCE=1V
IC=1A,VCE=1V
VCE(sat)*
IC=1A, IB=0.1A
Collector Emitter Saturation Voltage
VBE(sat)*
IC=1A, IB=0.1A
Base Emitter Saturation Voltage
VBE(on) *
IC=1A,VCE=1V
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
ft
IC=250mA,VCE=10V,f=1MHz
Transistors frequency
Cob
VCB=10V, IE=0, f=100kHz
Output Capacitance
hfe
IC=250mA,VCE=10V,f=1kHz
Small Signal Current Gain
*Pulse Test PW=300us, Duty Cycle=2%
MIN
80
-
-
-
-
-
40
30
10
-
-
-
3.0
-
25
TYP
-
-
-
-
-
-
-
MAX
-
0.5
0.1
0.1
0.5
1.0
-
150
-
0.6
1.3
1.3
-
100
-
UNIT
V
mA
mA
mA
mA
mA
-
-
V
V
V
MHz
pF
-
-
-
Continental Device India Limited
Data Sheet
Page 1 of 2
BOCA [ BOCA SEMICONDUCTOR CORPORATION ]
