NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5551
TO- 92
CBE
Boca Semiconductor Corp.
BSC
High Voltage NPN Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
VCEO
160
Collector -Emitter Voltage
VCBO
180
Collector -Base Voltage
VEBO
6.0
Emitter -Base Voltage
IC
600
Collector Current Continuous
PD
625
Power Dissipation @Ta=25 degC
5.0
Derate Above 25 deg C
PD
1.5
Power Dissipation @Tc=25 degC
12
Derate Above 25 deg C
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-c)
125
Junction to Case
Rth(j-a) (1)
357
Junction to Ambient
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
VCEO
IC=1mA,IB=0
160
-
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
180
-
Collector -Base Voltage
VEBO
IE=10uA, IC=-0
6.0
-
Emitter -Base Voltage
ICBO
VCB=160V, IE=0
-
-
Collector-Cut off Current
Ta=100 deg C
VCB=160V, IE=0
IEBO
VEB=4V, IC=0
hFE*
IC=1mA,VCE=5V
IC=10mA,VCE=5V
IC=50mA,VCE=5V
VCE(Sat)* IC=10mA,IB=1mA
IC=50mA,IB=5mA
VBE(Sat) * IC=10mA,IB=1mA
IC=50mA,IB=5mA
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
50
UNIT
V
V
V
nA
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
80
80
30
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
250
-
0.15
0.2
1.0
1.0
uA
nA
V
V
V
V
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BOCA [ BOCA SEMICONDUCTOR CORPORATION ]
