TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
Emitter-base voltage (open collector)
Collector current
Collector current (Peak)
Base current
Total power dissipation upto T
C
=25°C
Derate above 25°C
Total power dissipation upto T
A
=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
B
= 0; V
CE
= 30V
I
B
= 0; V
CE
= 60V
V
EB
= 0; V
CE
= V
CEO
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 30 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 1 A; I
B
= 125 mA
Base emitter on voltage
I
C
= 1 A; V
CE
= 4 V
D.C. current gain
I
C
= 0.2 A; V
CE
= 4 V
I
C
= 1 A; V
CE
= 4 V
Small-signal current gain
I
C
= 0.2A; V
CE
= 10V; f = 1 KHz
Transition frequency
I
C
= 0.2A; V
CE
= 10V; f = 1 MHz
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
j
T
stg
R
th j–a
R
th j–c
max.
max.
max.
max.
max.
max.
max.
max.
max.
5.0
1.0
3.0
0.4
30
0.24
2
0.016
150
–65 to +150
62.5
4.167
V
A
A
A
W
W
/°C
W
W
/°C
°C
ºC
°C W
/
°C W
/
29
30
I
CEO
I
CEO
I
CES
I
EBO
max. 0.3
max. –
max.
max.
29A 29B 29C
30A 30B 30C
0.3
–
–
0.3
0.2
1.0
60
60
5.0
0.7
1.3
40
15
75
20
3
MHz
80
80
100
100
–
0.3
mA
mA
mA
mA
V
V
V
V
V
V
CEO(sus)
* min. 40
V
CBO
min. 40
V
EBO
min.
V
CEsat
*
V
BE(on)
*
h
FE
*
h
FE
*
h
fe
f
T
(2)
max.
max.
min.
min.
max.
min.
min.
* Pulse test: pulse width
≤
300 µs; duty cycle
≤
2%.
(2) f
T
= |h
fe
|• f
test
.
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page: 2
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