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2FAL-M16R 参数 Datasheet PDF下载

2FAL-M16R图片预览
型号: 2FAL-M16R
PDF下载: 下载PDF文件 查看货源
内容描述: 集成无源及有源器件 [Integrated Passive & Active Devices]
分类和应用: 数据线路滤波器过滤器LTE
文件页数/大小: 3 页 / 273 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号2FAL-M16R的Datasheet PDF文件第2页浏览型号2FAL-M16R的Datasheet PDF文件第3页  
IA
NT
Features
Applications
Lead free as standard
RoHS compliant*
ESD protection >25 kV
Protects up to 8 lines
Bidirectional EMI filtering
DFN-16 package
Cell phones
PDAs and notebooks
GPS and SMART cards
Color LCD display panel
*R
oH
S
CO
M
PL
2FAL-M16R Integrated Passive & Active Devices
General Information
The 2FAL-M16R device, manufactured using Thin Film on
Silicon technology, provides ESD protection for the external
ports of portable electronic devices such as cell phones,
notebooks and PDAs.
The ESD protection provided by the component enables a data
port to withstand a minimum ±8 KV Contact / ±15 KV Air
Discharge per the ESD test method specified in IEC 61000-4-2.
The device measures 4 mm x 1.7 mm and can be mounted
directly onto an FR4 printed circuit board. The device meets
typical thermal cycle and bend test specifications without the
use of an underfill material.
FOR EACH LINE
100 OHM
INT1~8
EXT1~8
10 pF
10 pF
GND
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Resistance
Capacitance @ 2.5 V, 1 MHz
Rated Standoff Voltage
Breakdown Voltage @ 1 mA
Forward Voltage @ 10 mA
Leakage Current @ 3 V
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Frequency:
Attenuation @ 800-3000 MHz
Cut-off (50
I/O) Zero Bias
DC Power per Resistor
f
C
Symbol
R
C
V
WM
V
BR
V
F
I
D
6
0.8
0.1
Min.
85
16
Nom.
100
20
Max.
115
24
5
Unit
pF
V
V
V
µA
±8
±15
25
35
150
100
kV
kV
db
MHz
mW
P
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Symbol
T
J
T
STG
Min.
-40
-55
Nom.
+25
+25
Max.
+85
+150
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.