BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
●
●
●
●
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Designed for Complementary Use with the
BD246 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD245
Collector-emitter voltage (R
BE
= 100
Ω)
BD245A
BD245B
BD245C
BD245
Collector-emitter voltage (I
C
= 30 mA)
BD245A
BD245B
BD245C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
�½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
55
70
90
115
45
60
80
100
5
10
15
3
80
3
62.5
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1