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BD545 参数 Datasheet PDF下载

BD545图片预览
型号: BD545
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 104 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD546 Series
85 W at 25°C Case Temperature
15 A Continuous Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD545
Collector-base voltage (I
E
= 0)
BD545A
BD545B
BD545C
BD545
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD545A
BD545B
BD545C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
40
60
80
100
5
15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1