BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD645
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD647
BD649
BD651
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 70 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
5V
3V
12 mA
50 mA
50 mA
3V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
3A
3A
5A
5A
3A
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
2
2.5
3
2.5
V
V
V
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
MIN
60
80
100
120
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.0
62.5
UNIT
°C/W
°C/W
2
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
