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BDT60B 参数 Datasheet PDF下载

BDT60B图片预览
型号: BDT60B
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率DARLINGTONS [PNP SILICON POWER DARLINGTONS]
分类和应用: 晶体晶体管功率双极晶体管开关局域网
文件页数/大小: 5 页 / 119 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
50 W at 25°C Case Temperature
4 A Continuous Collector Current
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDT60
Collector-base voltage (I
E
= 0)
BDT60A
BDT60B
BDT60C
BDT60
Collector-emitter voltage (I
B
= 0)
BDT60A
BDT60B
BDT60C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-4
-0.1
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1