BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS120AH
TCS120AG
40000
10000
3·0
tp = 300 µs, duty cycle < 2%
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
2·5
2·0
1·5
1·0
1000
TC = -40°C
0·5
TC = 25°C
VCE
=
3 V
TC = 100°C
tp = 300 µs, duty cycle < 2%
100
0·5
0
0·5
1·0
10
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AI
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
10
IC - Collector Current - A
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
