BUL770
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
T
C
= 25°C
h
FE
- Forward Current Transfer Ratio
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
30
L770CHF
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
I
B
= I
C
/ 5
T
C
= 25°C
T
C
= 90°C
L770CVB
10
1·0
0·1
V
CE
= 1 V
V
CE
= 5 V
1·0
0·01
0·1
1·0
10
0·01
0·1
1·0
I
C
- Collector Current - A
10
I
C
- Collector Current - A
Figure 1.
Figure 2.
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10
I
B(on)
= I
C
/ 5
I
B(off)
= I
C
/ 2.5
V
CC
= 40 V
V
CLAMP
= 300 V
L
= 1 mH
T
C
= 25°C
L770CI1
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10
L770CI3
Inductive Switching Time - µs
1·0
Inductive Switching Time - µs
t
sv
t
xo
t
fi
I
B(on)
= 160 mA, V
CC
= 40 V, L = 1 mH
I
B(off)
= 320 mA, V
CLAMP
= 300 V, I
C
= 800 mA
1·0
0·1
t
sv
t
fi
0·01
0·1
0·1
1·0
I
C
- Collector Current - A
10
0
20
40
60
80
100
T
C
- Case Temperature - °C
Figure 3.
Figure 4.
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
