BUT11
NPN SILICON POWER TRANSISTOR
●
●
●
Rugged Triple-Diffused Planar Construction
100 W at 25°C Case Temperature
5 A Continuous Collector Current
B
C
E
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
10 ms, duty cycle
≤
2%.
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
VALUE
850
850
400
10
5
10
100
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
