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CDNBS08-SLVU2.8-4 参数 Datasheet PDF下载

CDNBS08-SLVU2.8-4图片预览
型号: CDNBS08-SLVU2.8-4
PDF下载: 下载PDF文件 查看货源
内容描述: CDNBS08 - SLVU2.8-4 - 低电容TVS阵列 [CDNBS08-SLVU2.8-4 - Low Capacitance TVS Array]
分类和应用: 瞬态抑制器二极管电视光电二极管PC局域网
文件页数/大小: 4 页 / 326 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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PL
IA
Features
Applications
NT
Lead free device (RoHS compliant*)
Protects up to 4 I/O ports
Unidirectional configuration
ESD protection
Low capacitance 3 pF
Ethernet – 10/100/1000 Base T
Personal digital assistant
Handheld electronics
Cellular phones
Video cards
*R
oH
S
CO
M
CDNBS08-SLVU2.8-4 – Low Capacitance TVS Array
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and
ESD protection applications in an 8 Lead Narrow Body SOIC package size format.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
The Bourns device
®
will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
1
2
3
4
8
7
6
5
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Current (t
p
= 8/20 µs)
Peak Pulse Power (t
p
= 8/20 µs)
1
Working Voltage
Breakdown Voltage @ 1 mA
Leakage Current @ V
WM
Capacitance @ 0 V, 1 MHz
Snapback Voltage
@ I
PP
= 2 A
@ I
PP
= 5 A
Clamping Voltage
@ I
PP
= 24 A
@ I
PP
= 30 A
Note:
1. See Peak Pulse Power vs. Pulse Time.
Symbol
I
PP
P
PP
V
WM
V
BR
I
D
C
Min.
Nom.
30
600
Max.
Unit
A
W
2.8
3.0
1.0
6
2.8
V
V
µA
pF
V
V
C
V
C
V
C
V
C
5.5
8.5
15
21
V
V
V
V
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Symbol
T
J
T
STG
Min.
-55
-55
Nom.
+25
+25
Max.
+150
+150
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.