TISP61089HDM Overvoltage Protector
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted) (Continued)
Parameter
I
H
I
GKS
I
GT
V
GT
C
KA
NOTE:
Holding current
Gate reverse current
Gate trigger current
Gate-cathode trigger voltage
Cathode-anode off-state capacitance
Test Conditions
I
T
= -1 A, di/dt = 1 A/ms, V
GG
= -100 V
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
I
T
= -3 A, t
p(g)
≥
20
µs,
V
GG
= -100 V
I
T
= -3 A, t
p(g)
≥
20
µs,
V
GG
= -100 V
f = 1 MHz, V
d
= 1 V rms, V
D
= -50 V, I
G
= 0
T
A
= 25
°C
T
A
= 85
°C
Min Typ Max Unit
-150
-5
-50
15
2.5
40
mA
µA
mA
V
pF
5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
Thermal Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
R
θJA
NOTE
Junction to ambient thermal resistance
Test Conditions
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, P
TOT
= 4 W
(See Note 6)
Min Typ Max
55
Unit
°C/W
6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Forward
Conduction
Characteristic
I
FSM
(= |I
TSM
|)
I
F
V
F
V
GK(BO)
V
GG
V
D
I
D
-v
+v
I
(BO)
I
S
I
H
V
T
I
T
I
TSM
V
(BO)
V
S
Quadrant III
Switching
Characteristic
I
PPSM
-i
PM-TISP6-001-a
Figure 1. Voltage-Current Characteristic
Unless Otherwise Noted, All Voltages are Referenced to the Anode
MAY 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
